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| STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFETTM Power MOSFET Preliminary Data Features Type STB300NH02L STP300NH02L VDSS 24V 24V RDS(on) Max < 1.8m < 2.2m ID 120A 120A 3 1 RDS(on)*Qg industry's benchmark Conduction losses reduced Switching losses reduced Low profile, very low parasitic inductance TO-220 1 2 3 DPAK Description This product utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable for high current OR-ing application. Figure 1. Internal schematic diagram Applications Switching application - Specifically designed and optimized for high efficiency DC/DC converters - OR-ing Table 1. Device summary Marking P300NH02L B300NH02L Package TO-220 DPAK Packaging Tube Tape & reel Order codes STP300NH02L STB300NH02L September 2007 Rev 2 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB300NH02L - STP300NH02L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STB300NH02L - STP300NH02L Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 24 20 120 120 480 300 2 -55 to 175 Unit V V A A A W W/C C ID (1) IDM (2) (3) PTOT Tj Operating junction temperature 1. This value is silicon limited 2. Pulse width limited by safe operating area 3. This value is rated according Rthj-case Table 3. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 0.5 62.5 Unit C/W C/W Table 4. Symbol IAV EAS (1) Avalanche characteristics Parameter Not-repetitive avalanche current (pulse width limited by Tj max) Single pulse avalanche energy Max value 60 1.6 Unit A J 1. Starting Tj = 25C, ID = IAV, VDD = 20V 3/14 Electrical characteristics STB300NH02L - STP300NH02L 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = 20V, VDS = 20V, Tc=125C VDS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 80A VGS= 10V, ID= 80A @100C TO-220 DPAK TO-220 DPAK 1 1.8 1.4 2.7 2.1 Min. 24 1 10 100 2 2.2 1.8 Typ. Max. Unit V A A nA V m m m m Table 6. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 7055 3251 307 109.4 30.2 26.4 Max. Unit pF pF pF nC nC nC VDS = 15V, f = 1 MHz, VGS =0 VDD= 12V,ID= 120A, VGS= 10V (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain Gate input resistance 4.4 4/14 STB300NH02L - STP300NH02L Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD = 10V, ID = 60A , RG= 4.7 VGS= 10V, (see Figure 13) VDD = 10V, ID = 60A , RG= 4.7 VGS= 10V, (see Figure 13) Min. Typ. 18 275 Max. Unit ns ns Turn-off delay time Fall time 138 94.4 ns ns Table 8. Symbol ISD ISD VSD (1) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VGS = 0 ISD = 120A, VDD = 20V, di/dt = 100A/s Tj = 25C (see Figure 18) ISD =120A, VDD = 20V di/dt = 100A/s Tj = 150C (see Figure 18) 63 85 2.7 63.2 88 2.8 Test conditions Min Typ. Max 120 640 1.3 Unit A A V ns nC A ns nC A 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/14 Electrical characteristics STB300NH02L - STP300NH02L 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature 6/14 STB300NH02L - STP300NH02L Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuit STB300NH02L - STP300NH02L 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/14 STB300NH02L - STP300NH02L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB300NH02L - STP300NH02L TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 10/14 STB300NH02L - STP300NH02L Package mechanical data DPAK mechanical data mm Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0 4 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.50 0.055 0.094 10.4 0.393 Typ Max 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 Min 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 inch Typ Max 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.409 0.334 0.208 0.625 0.55 0.68 0.126 0.015 11/14 Packaging mechanical data STB300NH02L - STP300NH02L 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/14 STB300NH02L - STP300NH02L Revision history 6 Revision history Table 9. Date 21-Feb-2007 25-Sep-2007 Document revision history Revision 1 2 First release Corrected value on Avalanche characteristics Changes 13/14 STB300NH02L - STP300NH02L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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